Welcome to the MoRV („Modeling of Reliability under Variability“) project homepage.
Nowadays our modern life style completely depends on a multitude of integrated circuits (ICs) which are environing us. Their application field ranges from our common smart phones, over more and more sophisticated intelligent cars, to even medical implants. Year by year these ICs shrink in size due to a steady miniaturization process, but still become more and more efficient. Increasingly, partly vitally important tasks are assigned to these circuits.
|What is the problem?
As the miniaturizing process started decades ago, technology is on the verge of reaching the boundaries of atomic scales.
|What is the situation?
Techniques, commonly applied to increase system reliability, like triple installation and steady comparison of components (triple modular redundancy) are inapplicable for this kind of problem. As every component suffers the same aging effects they all tend to fail approximately at the same time.
|What are we doing about it?
This is where MoRV attaches. In MoRV the leading, aging effect focused research groups of industry (Infineon, IMEC, Global TCAD Solutions) and academia (TU Wien, Fraunhofer EAS, IROC, OFFIS) cooperate to create a quantum mechanical description and based on that to design simplified but accurate aging models of transistors, logic gates and even entire system components (e.g. an 8 bit multiplier). If a systems future performance, e.g. after years of usage, is already known during its design process, the system can be designed to adapt to its aged state and that decreases the required safety margins significantly.
On the left you see the latest type transistor (MuGFET), commonly used in technology generations scaled below 32 nm. A current between the outer metal contacts (Source and Drain) only flows through the channel (red) if an electrical current is applied to the middle contact (Gate). The name MuGFET (Multi Gate Field Effect Transistor) derives from a novel feature. A MuGFET transistors Gate not only controls the channels behavior from the top, but also from the sides. This leads to faster switching behavior and simultaneously to reduced power consumption.
Reliability, Process variation, Variability, Design for Reliability, Multi-physics simulation, Solid state physics, Compact model, Circuit model, Macro model